STG15M120F3D8
STG15M120F3D8 is IGBT manufactured by STMicroelectronics.
1200 V, 15 A trench gate field‑stop M series low‑loss IGBT die in D8 packing
Features
- 10 μs of short-circuit withstand time
- Low VCE(sat) = 1.85 V (typ.) at IC = 15 A
- Positive VCE(sat) temperature coefficient
- Tight parameter distribution
- Minimized junction temperature: TJ = 175 °C
Applications
- Motor control
EGCD
- Industrial drives
- PFC
- UPS
- Solar
- General purpose inverter
Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the...
