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STG15M120F3D8 - IGBT

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STMicroelectronics

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STG15M120F3D8 IGBT by STMicroelectronics - Datasheet Preview — Datasheet preview – STG15M120F3D8

Datasheet Details

Part number	STG15M120F3D8
Manufacturer	STMicroelectronics
File Size	219.76 KB
Description	IGBT
Datasheet	STG15M120F3D8 Datasheet
Additional preview pages of the STG15M120F3D8 datasheet.

Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

Features

10 μs of short-circuit withstand time.
Low VCE(sat) = 1.85 V (typ. ) at IC = 15 A.
Positive VCE(sat) temperature coefficient.
Tight parameter distribution.
Minimized junction temperature: TJ = 175 °C.

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Published: Mar 5, 2023 |