Datasheet Details
| Part number | STG200G65FD8AG |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 500.45 KB |
| Description | IGBT |
| Datasheet | STG200G65FD8AG-STMicroelectronics.pdf |
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Overview: STG200G65FD8AG Datasheet Automotive-grade trench gate field-stop 650 V, 200 A, high-efficiency M series IGBT die in D8 packing.
| Part number | STG200G65FD8AG |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 500.45 KB |
| Description | IGBT |
| Datasheet | STG200G65FD8AG-STMicroelectronics.pdf |
|
|
|
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.
Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.
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