STG200G65FD8AG Datasheet | STMicroelectronics

Features EGCD Product status link STG200G65FD8AG - AEC-Q101 qualified - Low-loss series IGBT - Low VCE(sat) = 1.52 V (typ.) at IC = 200 A - Positive VCE(sat) temperature coefficient - Tight parameter distribution - Maximum junction temperature: TJ = 175 °C Applications - EV/HEV traction inverters Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product summary Order code 650 V 200 A Die size 9.30 x 7.23 mm Packing D8 DS14389 - Rev 1 - July 2023 For further information contact your local STMicroelectronics sales office. .st. Mechanical parameters Mechanical parameters Table 1. Mechanical parameters Parameter Die size including scribe line Die thickness Wafer size Maximum possible dice per wafer Front side passivation Emitter pad size Gate pad size Front side metallization Back side metallization Die bond Remended wire bonding position Thickness position Thickness Value Unit 9.30 x 7.23...