STGB15H60DF Datasheet | STMicroelectronics

Features - High speed switching - Tight parameters distribution - Safe paralleling - Low thermal resistance - Short-circuit rated - Ultrafast soft recovery antiparallel diode Applications - Motor control - UPS - PFC Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the H series of IGBTs, which represents an optimum promise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGB15H60DF STGF15H60DF STGP15H60DF DS9881 - Rev 4 - May 2025 For further information, contact your local STMicroelectronics sales office. .st. STGB15H60DF, STGF15H60DF, STGP15H60DF Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0 V) Continuous collector current at TC = 25 °C IC Continuous collector current at TC = 100 °C ICP (2) Pulsed collector current Gate-emitter voltage Continuous forward current TC = 25 °C IF Continuous forward current at TC = 100 °C IFP (2) Pulsed forward current VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; Tc = 25...