STGB25N36LZAG Datasheet - STMicroelectronics

STGB25N36LZAG Automotive-grade 360V internally clamped IGBT

E (3) IGBTG1C2TABE3ESD This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperat.

STGB25N36LZAG Features

* AEC-Q101 qualified

* SCIS energy of 300 mJ @ TJ = 25 °C

* Parts are 100% tested in SCIS

* ESD gate-emitter protection

* Gate-collector high voltage clamping

* Logic level gate drive

* Very low saturation voltage

* High pulsed current

STGB25N36LZAG Datasheet (537.96 KB)