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STGB25N40LZAG Datasheet

Automotive-grade 400 V internally clamped IGBT

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STGB25N40LZAG,
STGD25N40LZAG
Datasheet
Automotive-grade 400 V internally clamped IGBT ESCIS 320 mJ
TAB TAB
2
1
D2PAK
3
23
1
DPAK
C (2 or TAB)
G (1)
RG
RGE
Features
• AEC-Q101 qualified
• SCIS energy of 320 mJ @ TJ = 25 °C
• Parts are 100% tested in SCIS
• ESD gate-emitter protection
• Gate-collector high voltage clamping
• Logic level gate drive
• Very low saturation voltage
• High pulsed current capability
• Gate and gate-emitter resistor
Applications
• Automotive ignition coil driver circuit
E (3)
IGBTG1C2TABE3ESD
Product status
STGB25N40LZAG
STGD25N40LZAG
Product summary
Order code
STGB25N40LZAG
Marking
GB25N40LZ
Package
D²PAK
Packing
Tape and reel
Order code
STGD25N40LZAG
Marking
GD25N40LZ
Package
DPAK
Packing
Tape and reel
Description
This application-specific IGBT utilizes the most advanced PowerMESH™ technology
optimized for coil driving in the harsh environment of automotive ignition systems.
These devices show very low on-state voltage and very high SCIS energy capability
over a wide operating temperature range. Moreover, ESD-protected logic level gate
input and an integrated gate resistor means no external protection circuitry is
required.
DS12284 - Rev 3 - February 2018
For further information contact your local STMicroelectronics sales office.
www.st.com/


STMicroelectronics Electronic Components Datasheet

STGB25N40LZAG Datasheet

Automotive-grade 400 V internally clamped IGBT

No Preview Available !

STGB25N40LZAG, STGD25N40LZAG
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage (VGE = 0 V)
VCES(clamped)
V
VECS
Emitter-collector voltage (VGE = 0 V)
20 V
Continuous collector current at TC = 25 °C, VGE = 4 V
IC
Continuous collector current at TC = 100 °C, VGE = 4 V
25 A
25 A
ICP (1)
Pulsed collector current
50 A
VGE Gate-emitter voltage
VGE(clamped)
V
PTOT
Total dissipation at TC = 25 °C
150 W
ESCIS_25 (2) Self clamping inductive switching energy
320 mJ
ESCIS_150 (3) Self clamping inductive switching energy @ TJ = 150 °C
180 mJ
ESD
Human body model, R = 1.5 kΩ, C = 100 pF
Charged device model
4 kV
2 kV
TSTG
TJ
Storage temperature range
Operating junction temperature range
- 55 to 175
°C
1. Pulse width limited by maximum junction temperature.
2. Starting Tj = 25 °C, L = 3 mH, Rg = 1 kΩ, Vcc = 50 V during inductor charging and Vcc = 0 V during the time in clamp. Parts
are 100% electrically tested in production.
3. Starting Tj = 150 °C, L = 3 mH, Rg = 1 kΩ, Vcc = 50 V during inductor charging and Vcc = 0 V during the time in clamp.
Symbol
Parameter
Table 2. Thermal data
Rthj-case
Rthj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
Value
D²PAK
DPAK
1
62.5 100
Unit
°C/W
°C/W
DS12284 - Rev 3
page 2/20


Part Number STGB25N40LZAG
Description Automotive-grade 400 V internally clamped IGBT
Maker STMicroelectronics
Total Page 20 Pages
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