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STGB30H60DLLFBAG - Automotive-grade trench gate field-stop IGBT

Product Overview

STMicroelectronics

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STGB30H60DLLFBAG Automotive-grade trench gate field-stop IGBT by STMicroelectronics - Datasheet Preview — Datasheet preview – STGB30H60DLLFBAG

Datasheet Details

Part number	STGB30H60DLLFBAG
Manufacturer	STMicroelectronics
File Size	0.98 MB
Description	Automotive-grade trench gate field-stop IGBT
Datasheet	STGB30H60DLLFBAG Datasheet
Additional preview pages of the STGB30H60DLLFBAG datasheet.

Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

Features

AEC-Q101 qualified.
Maximum junction temperature: TJ = 175 °C.
Logic level gate drive.
High speed switching series.
Minimized tail current.
VCE(sat) = 1.7 V (typ. ) @ IC = 30 A.
Low VF soft recovery co-packaged diode.
Tight parameters distribution.
Safer paralleling.
Low thermal resistance.

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Published: Feb 18, 2023 |