Datasheet Summary
Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed
- production data
2 3
1 D²PAK
Figure 1: Internal schematic diagram
Features
- AEC-Q101 qualified
- Maximum junction temperature: TJ = 175 °C
- Logic level gate drive
- High speed switching series
- Minimized tail current
- VCE(sat) = 1.7 V (typ.) @ IC = 30 A
- Low VF soft recovery co-packaged diode
- Tight parameters distribution
- Safer paralleling
- Low thermal resistance
Applications
- Ignition
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an...