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STGB30M65DF2 Datasheet, STMicroelectronics

STGB30M65DF2 igbt equivalent, trench gate field-stop igbt.

STGB30M65DF2 Avg. rating / M : 1.0 rating-13

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STGB30M65DF2 Datasheet

Features and benefits


* 6 µs of short-circuit withstand time
* VCE(sat) = 1.55 V (typ.) @ IC = 30 A
* Tight parameters distribution
* Safer paralleling
* Low thermal resist.

Application


* Motor control
* UPS
* PFC Description This device is an IGBT developed using an advanced proprietary trenc.

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STGB30M65DF2 Page 1 STGB30M65DF2 Page 2 STGB30M65DF2 Page 3

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