Datasheet Details
| Part number | STGB4M65DF2 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 971.33 KB |
| Description | IGBT |
| Download | STGB4M65DF2 Download (PDF) |
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| Part number | STGB4M65DF2 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 971.33 KB |
| Description | IGBT |
| Download | STGB4M65DF2 Download (PDF) |
|
|
|
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.
The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential.
Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
STGB4M65DF2 Trench gate field-stop IGBT, M series 650 V, 4 A low loss Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Internal schematic.
| Part Number | Description |
|---|---|
| STGB40H65FB | IGBT |
| STGB40V60F | 600V 40A IGBT |
| STGB10H60DF | 600V 10A IGBT |
| STGB10M65DF2 | Trench gate field-stop IGBT |
| STGB10NB40LZT4 | 410V internally clamped IGBT |
| STGB10NC60K | short-circuit rugged IGBT |
| STGB10NC60KDT4 | 600V short-circuit rugged IGBT |
| STGB14NC60KD | 600V short-circuit rugged IGBT |
| STGB14NC60KDT4 | 600V short-circuit rugged IGBT |
| STGB15H60DF | Trench gate field-stop IGBT |