STGB40V60F Datasheet | STMicroelectronics

Trench gate field-stop IGBT, V series 600 V, 40 A very high speed TAB 2 3 1 D²PAK C(2, TAB) G(1) E(3) G1C2TABE3_NO_DIODE Features - Maximum junction temperature: TJ = 175 °C - Tail-less switching off - VCE(sat) = 1.8 V (typ.) @ IC = 40 A - Tight parameters distribution - Safe paralleling - Low thermal resistance Applications - Welding - PFC converters - single phase input - Solar inverters (string and central) - Uninterruptable power supplies (UPS) - EV charging - DC fast charging stations Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the V series IGBTs, which represent an optimum promise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGB40V60F Product summary Order code Marking GB40V60F Package...