STGB4M65DF2 Datasheet | STMicroelectronics

Trench gate field-stop IGBT, M series 650 V, 4 A low loss - production data 2 3 D²PAK Figure 1: Internal schematic diagram Features - 6 µs of short-circuit withstand time - VCE(sat) = 1.6 V (typ.) @ IC = 4 A - Tight parameter distribution - Safer paralleling - Low thermal resistance - Soft and very fast recovery antiparallel diode Applications - Motor control - UPS - PFC Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Order code STGB4M65DF2 Table 1: Device summary Marking Package G4M65DF2 D²PAK Packing Tape and reel November 2016 Doc ID028667 Rev...