STGB40H65FB
STGB40H65FB is IGBT manufactured by STMicroelectronics.
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
- production data
2 3
1 D²PAK
Figure 1: Internal schematic diagram C(2, TAB)
G(1)
E(3)
Features
- Maximum junction temperature: TJ = 175 °C
- High speed switching series
- Minimized tail current
- Low saturation voltage: VCE(sat) = 1.6 V (typ.)
@ IC = 40 A
- Tight parameter distribution
- Safe paralleling
- Low thermal resistance
Applications
- Photovoltaic inverters
- High frequency converters
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum promise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Order code STGB40H65FB
G1C2TE3
Table 1: Device...
