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STGD20N45LZAG Datasheet

Automotive-grade 450 V internally clamped IGBT

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STGB20N45LZAG,
STGD20N45LZAG
Datasheet
Automotive-grade 450 V internally clamped IGBT ESCIS 300 mJ
TAB TAB
2
1
D2PAK
3
23
1
DPAK
C (2 or TAB)
G (1)
RG
RGE
Features
• AEC-Q101 qualified
• SCIS energy of 300 mJ @ TJ = 25 °C
• Parts are 100% tested in SCIS
• ESD gate-emitter protection
• Gate-collector high voltage clamping
• Logic level gate drive
• Very low saturation voltage
• High pulsed current capability
• Gate and gate-emitter resistor
Applications
• Automotive ignition coil driver circuit
E (3)
IGBTG1C2TABE3ESD
Product status
STGB20N45LZAG
STGD20N45LZAG
Product summary
Order code
STGB20N45LZAG
Marking
GB20N45LZ
Package
D2PAK
Packing
Tape and reel
Order code
STGD20N45LZAG
Marking
GD20N45LZ
Package
DPAK
Packing
Tape and reel
Description
This application-specific IGBT utilizes the most advanced PowerMESH™ technology
optimized for coil driving in the harsh environment of automotive ignition systems.
These devices show very low on-state voltage and very high SCIS energy capability
over a wide operating temperature range. Moreover, ESD-protected logic level gate
input and an integrated gate resistor means no external protection circuitry is
required.
DS11362 - Rev 6 - February 2018
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

STGD20N45LZAG Datasheet

Automotive-grade 450 V internally clamped IGBT

No Preview Available !

STGB20N45LZAG, STGD20N45LZAG
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage (VGE = 0 V)
VCES(clamped)
V
VECS
Emitter-collector voltage (VGE = 0 V)
20 V
Continuous collector current at TC = 25 °C, VGE = 4 V
IC
Continuous collector current at TC = 100 °C, VGE = 4 V
25 A
25 A
ICP (1)
Pulsed collector current
50 A
VGE Gate-emitter voltage
VGE(clamped)
V
PTOT
Total dissipation at TC = 25 °C
150 W
ESCIS_25 (2)
Self-clamping inductive switching energy
300 mJ
ESCIS_150 (3)
Self-clamping inductive switching energy @ TJ = 150 °C
170 mJ
ESD
Human body model, R = 1.5 kΩ, C = 100 pF
Charged device model
4 kV
2 kV
TSTG
TJ
Storage temperature range
Operating junction temperature range
-55 to 175
°C
1. Pulse width limited by maximum junction temperature.
2. Starting Tj = 25 °C, L = 3 mH, Rg = 1 kΩ, Vcc = 50 V during inductor charging and Vcc = 0 V during the time in clamp. Parts
are 100% electrically tested in production.
3. Starting Tj = 150 °C, L = 3 mH, Rg = 1 kΩ, Vcc = 50 V during inductor charging and Vcc = 0 V during the time in clamp.
Symbol
Rthj-case
Rthj-amb
Table 2. Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Value
D²PAK
DPAK
1
62.5 100
Unit
°C/W
°C/W
DS11362 - Rev 6
page 2/20


Part Number STGD20N45LZAG
Description Automotive-grade 450 V internally clamped IGBT
Maker STMicroelectronics
Total Page 20 Pages
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