STGD4H60DF Datasheet | STMicroelectronics

Features - Maximum junction temperature: TJ = 175 °C - Low VCE(sat) = 1.6 V (typ.) @ IC = 4 A - Tight parameter distribution - Low thermal resistance - Short-circuit rated - Soft and fast recovery antiparallel diode NG1E3C2T Applications - Industrial motor control - Dishwashers - Refrigerators and freezers - Fans Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. This device is part of the H series of IGBTs, which represent an optimum promise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGD4H60DF Product summary Order code Marking G4H60DF Package DPAK Packing Tape and reel DS13901 - Rev 2 - February 2023 For further information contact your local STMicroelectronics sales office. .st. Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0) Continuous collector current at TC = 25 °C IC Continuous collector current at TC = 100 °C ICP(1) Pulsed collector...