STMicroelectronics STGD4H60DF
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters.| Part No. | STGD4H60DF |
|---|---|
| Datasheet | STGD4H60DF Download |
| Manufacturer |  STMicroelectronics |
| Description | 600V 4A high speed IGBT |
| Buy | Stock & Price |
FEATURES
● Maximum junction temperature: TJ = 175 °C● Low VCE(sat) = 1.6 V (typ.) @ IC = 4 A
● Tight parameter distribution
● Low thermal resistance
● Short-circuit rated
● Soft and fast recovery antiparallel diode NG1E3C2T
APPLICATIONS
● Industrial motor control● Dishwashers
● Refrigerators and freezers
● Fans
DESCRIPTION
Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGD4H60DF Product summary Order code STGD4H60DF Marking G4H60DF Package DPAK Packing Tape and reel DS13901 - Rev 2 - February 2023 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0) Continuous collector current at TC = 25 °C IC Continuous collector current at TC = 100 °C ICP(1) Pulsed collector current VGE Gate-emitter voltage Continuous forward current TC = 25 °C IF Cont...
