Datasheet Details
| Part number | STGD4M65DF2 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 416.53 KB |
| Description | IGBT |
| Datasheet | STGD4M65DF2-STMicroelectronics.pdf |
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Overview: STGD4M65DF2 Trench gate field-stop IGBT, M series 650 V, 4 A low loss Datasheet - production data Figure 1: Internal schematic.
| Part number | STGD4M65DF2 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 416.53 KB |
| Description | IGBT |
| Datasheet | STGD4M65DF2-STMicroelectronics.pdf |
|
|
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This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.
The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential.
Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
Compare STGD4M65DF2 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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