STGD4H60DF Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. This device is part of the H series of IGBTs, which represent an optimum promise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling...
STGD4H60DF Key Features
- Maximum junction temperature: TJ = 175 °C
- Low VCE(sat) = 1.6 V (typ.) @ IC = 4 A
- Tight parameter distribution
- Low thermal resistance
- Short-circuit rated
- Soft and fast recovery antiparallel diode