Datasheet Details
| Part number | STGD4H60DF |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 398.77 KB |
| Description | IGBT |
| Datasheet | STGD4H60DF-STMicroelectronics.pdf |
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Overview: STGD4H60DF Datasheet Trench gate field-stop 600 V, 4 A high speed H series IGBT in a DPAK package TAB 23 1 DPAK C(2,.
| Part number | STGD4H60DF |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 398.77 KB |
| Description | IGBT |
| Datasheet | STGD4H60DF-STMicroelectronics.pdf |
|
|
|
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.
This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters.
Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
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