STGD4M65DF2 Key Features
- 6 µs of short-circuit withstand time
- VCE(sat) = 1.6 V (typ.) @ IC = 4 A
- Tight parameter distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
- Part: STGD4M65DF2
- Description: IGBT
- Manufacturer: STMicroelectronics
- Size: 416.53 KB
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