STGD6M65DF2 Overview
Key Specifications
Max Operating Temp: 175 °C
Min Operating Temp: -55 °C
Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.
Key Features
- Maximum junction temperature: TJ = 175 °C
- 6 μs of minimum short-circuit withstand time
- VCE(sat) = 1.55 V (typ.) @ IC = 6 A
- Tight parameter distribution
- Safer paralleling
