STGD6NC60HDT4 Datasheet - STMicroelectronics

IGBT

STGD6NC60HDT4 Features

* Order codes VCES VCE(sat) max. IC (at TC = 100 °C) STGD6NC60HDT4 600 V 2.5 V 7A

* Low on-voltage drop (VCE(sat))

* Low CRES / CIES ratio (no cross-conduction susceptibility)

* Very soft ultra fast recovery antiparallel diode

* High frequency operation NG1E3C

STGD6NC60HDT4 General Description

This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications. Product status link STGD6NC60HDT4 Product .

STGD6NC60HDT4 Datasheet (715.41 KB)