STGD6M65DF2 Datasheet (STMicroelectronics)

STGD6M65DF2, IGBT

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.

Furthe

STGD6M65DF2 Features

* Maximum junction temperature: TJ = 175 °C

* 6 μs of minimum short-circuit withstand time

* VCE(sat) = 1.55 V (typ.) @ IC = 6 A

* Tight parameter distribution

* Safer paralleling

* Positive VCE(sat) temperature coefficient

* Low therm