Datasheet4U Logo Datasheet4U.com

STGD6M65DF2 IGBT

📥 Download Datasheet  Datasheet Preview Page 1

Description

STGD6M65DF2 Datasheet Trench gate field-stop, 650 V, 6 A, low-loss M series IGBT in a DPAK package TAB 23 1 DPAK C(2, TAB) G(1) E(3) NG1E3C2T Prod.
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

📥 Download Datasheet

Preview of STGD6M65DF2 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Features

* Maximum junction temperature: TJ = 175 °C
* 6 μs of minimum short-circuit withstand time
* VCE(sat) = 1.55 V (typ. ) @ IC = 6 A
* Tight parameter distribution
* Safer paralleling
* Positive VCE(sat) temperature coefficient
* Low therm

Applications

* Industrial motor control
* PFC converters, single phase input

STGD6M65DF2 Distributors

📁 Related Datasheet

📌 All Tags

STMicroelectronics STGD6M65DF2-like datasheet