STGD6M65DF2 Datasheet - STMicroelectronics

IGBT

STGD6M65DF2 Features

* Maximum junction temperature: TJ = 175 °C

* 6 μs of minimum short-circuit withstand time

* VCE(sat) = 1.55 V (typ.) @ IC = 6 A

* Tight parameter distribution

* Safer paralleling

* Positive VCE(sat) temperature coefficient

* Low therm

STGD6M65DF2 General Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthe.

STGD6M65DF2 Datasheet (885.14 KB)

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Part number:

STGD6M65DF2

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STMicroelectronics ↗

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885.14 KB

Description:

Igbt.
STGD6M65DF2 Datasheet Trench gate field-stop, 650 V, 6 A, low-loss M series IGBT in a DPAK package TAB 23 1 DPAK C(2, TAB) G(1) E(3) NG1E3C2T Prod.

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STGD6M65DF2 Features

STGD6M65DF2 General Description

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