Part number:
STGD6M65DF2
Manufacturer:
File Size:
885.14 KB
Description:
Igbt.
STGD6M65DF2 Datasheet Trench gate field-stop, 650 V, 6 A, low-loss M series IGBT in a DPAK package TAB 23 1 DPAK C(2, TAB) G(1) E(3) NG1E3C2T Prod.
* Maximum junction temperature: TJ = 175 °C
* 6 μs of minimum short-circuit withstand time
* VCE(sat) = 1.55 V (typ.) @ IC = 6 A
* Tight parameter distribution
* Safer paralleling
* Positive VCE(sat) temperature coefficient
* Low therm
STGD6M65DF2 Datasheet (885.14 KB)
STGD6M65DF2
885.14 KB
Igbt.
STGD6M65DF2 Datasheet Trench gate field-stop, 650 V, 6 A, low-loss M series IGBT in a DPAK package TAB 23 1 DPAK C(2, TAB) G(1) E(3) NG1E3C2T Prod.
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