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STGD6M65DF2

The STGD6M65DF2 is IGBT designed by STMicroelectronics.

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STMicroelectronics

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STGD6M65DF2 IGBT by STMicroelectronics - Datasheet Preview — Datasheet preview – STGD6M65DF2

Datasheet Details

Part number	STGD6M65DF2
Manufacturer	STMicroelectronics
File Size	885.14 KB
Description	IGBT
Datasheet	STGD6M65DF2-STMicroelectronics.pdf
Additional preview pages of the STGD6M65DF2 datasheet.

Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

Features

Maximum junction temperature: TJ = 175 °C.
6 μs of minimum short-circuit withstand time.
VCE(sat) = 1.55 V (typ. ) @ IC = 6 A.
Tight parameter distribution.
Safer paralleling.
Positive VCE(sat) temperature coefficient.
Low thermal resistance.
Soft and very fast-recovery antiparallel diode.

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Published: Jan 7, 2017 |