STGH30H65DFB-2AG Overview
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum promise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
STGH30H65DFB-2AG Key Features
- AEC-Q101 qualified
- High-speed switching series
- Maximum junction temperature: TJ = 175 °C
- VCE(sat) = 1.55 V (typ.) @ IC = 30 A
- Safer paralleling
- Tight parameter distribution
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
STGH30H65DFB-2AG Applications
- DC/DC converter for EV/HEV