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STGH30H65DFB-2AG - IGBT

General Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

Key Features

  • AEC-Q101 qualified.
  • High-speed switching series.
  • Maximum junction temperature: TJ = 175 °C.
  • VCE(sat) = 1.55 V (typ. ) @ IC = 30 A.
  • Safer paralleling.
  • Tight parameter distribution.
  • Low thermal resistance.
  • Soft and very fast recovery antiparallel diode.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STGH30H65DFB-2AG Datasheet Automotive-grade trench gate field-stop, 650 V, 30 A, high-speed HB series IGBT in an H²PAK-2 package TAB 23 1 H2PAK-2 C(TAB) G(1) E(2,3) G1CTABE23 Features • AEC-Q101 qualified • High-speed switching series • Maximum junction temperature: TJ = 175 °C • VCE(sat) = 1.55 V (typ.) @ IC = 30 A • Safer paralleling • Tight parameter distribution • Low thermal resistance • Soft and very fast recovery antiparallel diode Applications • DC/DC converter for EV/HEV • HVAC and climate control Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.