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STGHU30M65DF2AG - Automotive-grade trench gate field-stop IGBT

Product Overview

STMicroelectronics

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STGHU30M65DF2AG Automotive-grade trench gate field-stop IGBT by STMicroelectronics - Datasheet Preview — Datasheet preview – STGHU30M65DF2AG

Datasheet Details

Part number	STGHU30M65DF2AG
Manufacturer	STMicroelectronics
File Size	1.05 MB
Description	Automotive-grade trench gate field-stop IGBT
Datasheet	STGHU30M65DF2AG Datasheet
Additional preview pages of the STGHU30M65DF2AG datasheet.

Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

Features

TAB 7 1 HU3PAK C(TAB).
AEC-Q101 qualified.
Maximum junction temperature: TJ = 175 °C.
6 μs of minimum short-circuit withstand time.
VCE(sat) = 1.6 V (typ. ) @ IC = 30 A.
Tight parameter distribution.
Safer paralleling.
Low thermal resistance.
Soft and very fast-recovery antiparallel diode.
Excellent switching performance thanks to the extra driving kelvin pin.

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Published: Aug 17, 2024 |