STGHU30M65DF2AG Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling...
STGHU30M65DF2AG Key Features
- AEC-Q101 qualified
- Maximum junction temperature: TJ = 175 °C
- 6 μs of minimum short-circuit withstand time
- VCE(sat) = 1.6 V (typ.) @ IC = 30 A
- Tight parameter distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast-recovery antiparallel diode
- Excellent switching performance thanks to the extra driving kelvin pin