STMicroelectronics STGHU30M65DF2AG
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.| Part No. | STGHU30M65DF2AG |
|---|---|
| Datasheet | STGHU30M65DF2AG Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade trench gate field-stop 650V 30A low-loss IGBT |
| Buy | Stock & Price |
FEATURES
TAB 7 1 HU3PAK C(TAB)● AEC-Q101 qualified
● Maximum junction temperature: TJ = 175 °C
● 6 μs of minimum short-circuit withstand time
● VCE(sat) = 1.6 V (typ.) @ IC = 30 A
● Tight parameter distribution
● Safer paralleling
● Low thermal resistance
● Soft and very fast-recovery antiparallel diode
● Excellent switching performance thanks to the extra driving kelvin pin
APPLICATIONS
G(1) K(2) E(3,4,5,6,7)● Automotive motor control
● e-compressor
● Industrial motor control
● Power supplies and converters K2G1CTABE34567
DESCRIPTION
Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product status link STGHU30M65DF2AG Product summary Order code STGHU30M65DF2AG Marking G30M65DF2AG Package HU3PAK Packing Tape and reel DS14705 - Rev 1 - June 2024 For further information contact your local STMicroelectronics sales office. STGHU30M65DF2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum...
