Datasheet4U Logo Datasheet4U.com

STGHU30M65DF2AG - Automotive-grade trench gate field-stop IGBT

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.

Features

  • TAB 7 1 HU3PAK C(TAB).
  • AEC-Q101 qualified.
  • Maximum junction temperature: TJ = 175 °C.
  • 6 μs of minimum short-circuit withstand time.
  • VCE(sat) = 1.6 V (typ. ) @ IC = 30 A.
  • Tight parameter distribution.
  • Safer paralleling.
  • Low thermal resistance.
  • Soft and very fast-recovery antiparallel diode.
  • Excellent switching performance thanks to the extra driving kelvin pin.

📥 Download Datasheet

Datasheet preview – STGHU30M65DF2AG

Datasheet Details

Part number STGHU30M65DF2AG
Manufacturer STMicroelectronics
File Size 1.05 MB
Description Automotive-grade trench gate field-stop IGBT
Datasheet download datasheet STGHU30M65DF2AG Datasheet
Additional preview pages of the STGHU30M65DF2AG datasheet.

📁 Similar Datasheet

  • STG2017 - Dual N-Channel FET (SamHop Microelectronics)
  • STG2454 - Dual N-Channel FET (SamHop Microelectronics)
  • STG2507 - Dual P-Channel FET (SamHop Microelectronics)
  • STG3155 - Low voltage 0.5 Ohm Max single SPDT switch (ST Microelectronics)
  • STG3157 - Low voltage low on-resistance SPDT switch (ST Microelectronics)
  • STG3220 - Low voltage high bandwidth dual SPDT switch (ST Microelectronics)
  • STG3680 - MAX DUAL SPDT SWITCH (ST Microelectronics)
  • STG3682 - Low Voltage High Bandwidth Dual SPDT Switch (ST Microelectronics)
  • STG3684 - LOW VOLTAGE 0.5 MAX DUAL SPDT SWITCH (ST Microelectronics)
  • STG3685 - LOW VOLTAGE 0.5ohm MAX DUAL SPDT SWITCH (ST Microelectronics)
Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
STGHU30M65DF2AG Datasheet Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT in an HU3PAK package Features TAB 7 1 HU3PAK C(TAB) • AEC-Q101 qualified • Maximum junction temperature: TJ = 175 °C • 6 μs of minimum short-circuit withstand time • VCE(sat) = 1.6 V (typ.) @ IC = 30 A • Tight parameter distribution • Safer paralleling • Low thermal resistance • Soft and very fast-recovery antiparallel diode • Excellent switching performance thanks to the extra driving kelvin pin Applications G(1) K(2) E(3,4,5,6,7) • Automotive motor control • e-compressor • Industrial motor control • Power supplies and converters K2G1CTABE34567 Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
Published: |