STGHU30M65DF2AG
Features
TAB 7
1 HU3PAK
C(TAB)
- AEC-Q101 qualified
- Maximum junction temperature: TJ = 175 °C
- 6 μs of minimum short-circuit withstand time
- VCE(sat) = 1.6 V (typ.) @ IC = 30 A
- Tight parameter distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast-recovery antiparallel diode
- Excellent switching performance thanks to the extra driving kelvin pin
Applications
G(1)
K(2) E(3,4,5,6,7)
- Automotive motor control
- e-pressor
- Industrial motor control
- Power supplies and converters
K2G1CTABE34567
Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.
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