STGH30H65DFB-2AG
Features
- AEC-Q101 qualified
- High-speed switching series
- Maximum junction temperature: TJ = 175 °C
- VCE(sat) = 1.55 V (typ.) @ IC = 30 A
- Safer paralleling
- Tight parameter distribution
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
Applications
- DC/DC converter for EV/HEV
- HVAC and climate control
Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum promise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Product status link STGH30H65DFB-2AG
Product summary
Order code STGH30H65DFB-2AG
Marking
G30H65DFBAG
Package
H²PAK-2
Packing
Tape and reel
DS13971
- Rev 2
- April 2022 For further information contact your local...
