STMicroelectronics STGH30H65DFB-2AG
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.| Part No. | STGH30H65DFB-2AG |
|---|---|
| Datasheet | STGH30H65DFB-2AG Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade 650V 30A high-speed IGBT |
| Buy | Stock & Price |
FEATURES
● AEC-Q101 qualified● High-speed switching series
● Maximum junction temperature: TJ = 175 °C
● VCE(sat) = 1.55 V (typ.) @ IC = 30 A
● Safer paralleling
● Tight parameter distribution
● Low thermal resistance
● Soft and very fast recovery antiparallel diode
APPLICATIONS
● DC/DC converter for EV/HEV● HVAC and climate control
DESCRIPTION
Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGH30H65DFB-2AG Product summary Order code STGH30H65DFB-2AG Marking G30H65DFBAG Package H²PAK-2 Packing Tape and reel DS13971 - Rev 2 - April 2022 For further information contact your local STMicroelectronics sales office. STGH30H65DFB-2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0 V) Continuous collector current at TC = 25 °C IC Continuous collector current at TC = 100 °C ICP(1) Pulsed collect...
