* 10 µs of short-circuit withstand time
* VCE(sat) = 1.65 V (typ.) @ IC = 40 A
* Tight parameter distribution
* Safer paralleling
* Low thermal resist.

* Industrial drives
* UPS
* Solar
* Welding * ( Description This device is an IGBT developed .

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the S series of 1200 V IGBTs which is tailored to maximize efficiency of low frequency industrial systems. Furthermore, a positive .

STGW40H120DF2

STGW40H65DFB

STGW40H65DFB-4

STGW40H65FB

STGW40M120DF3

STGW40N120KD

STGW40NC60KD

STGW40NC60V

STGW40NC60WD

STGW40V60DF

STGW40V60F

STGW45HF60WD

STGW45HF60WDI