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STGWA20HP65FB2 Datasheet IGBT

Manufacturer: STMicroelectronics

Overview: STGWA20HP65FB2 Datasheet Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO‑247 long leads package C(2, TAB).

General Description

NG1E3C2T The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.

The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy.

A diode used for protection purposes only is co-packaged in antiparallel with the IGBT.

Key Features

  • Maximum junction temperature : TJ = 175 °C.
  • Low VCE(sat) = 1.65 V (typ. ) @ IC = 20 A.
  • Co-packaged protection diode.
  • Minimized tail current.
  • Tight parameter distribution.
  • Low thermal resistance.
  • Positive VCE(sat) temperature coefficient.

STGWA20HP65FB2 Distributor