STGYA120M65DF2AG
STGYA120M65DF2AG is IGBT manufactured by STMicroelectronics.
Features
1 23 TAB
1 2 3
Max247 long leads
C(2, TAB)
G(1)
E(3)
NG1E3C2T
- AEC-Q101 qualified
- 6 µs of short-circuit withstand time
- VCE(sat) = 1.65 V (typ.) @ IC = 120 A
- Tight parameter distribution
- Safer paralleling
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
- Maximum junction temperature: TJ = 175 °C
Applications
- Heating system
- HV battery disconnect and fire-off system
- Main inverter (electric traction)
Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.
Product status link STGYA120M65DF2AG
Product summary
Order code STGYA120M65DF2AG
Marking
G120M65DF2AG
Package
Max247 long leads
Packing
Tube
DS11783
- Rev 5
- November 2022 For further information contact your local STMicroelectronics sales office.
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Electrical ratings
Electrical...
