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STGYA120M65DF2AG - IGBT

General Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.

Key Features

  • TAB 1 23 TAB 1 2 3 Max247 long leads C(2, TAB) G(1) E(3) NG1E3C2T.
  • AEC-Q101 qualified.
  • 6 µs of short-circuit withstand time.
  • VCE(sat) = 1.65 V (typ. ) @ IC = 120 A.
  • Tight parameter distribution.
  • Safer paralleling.
  • Positive VCE(sat) temperature coefficient.
  • Low thermal resistance.
  • Soft and very fast recovery antiparallel diode.
  • Maximum junction temperature: TJ = 175 °C.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STGYA120M65DF2AG Datasheet Automotive-grade trench gate field-stop, 650 V, 120 A, low-loss, M series IGBT in a Max247 long leads package Features TAB 1 23 TAB 1 2 3 Max247 long leads C(2, TAB) G(1) E(3) NG1E3C2T • AEC-Q101 qualified • 6 µs of short-circuit withstand time • VCE(sat) = 1.65 V (typ.) @ IC = 120 A • Tight parameter distribution • Safer paralleling • Positive VCE(sat) temperature coefficient • Low thermal resistance • Soft and very fast recovery antiparallel diode • Maximum junction temperature: TJ = 175 °C Applications • Heating system • HV battery disconnect and fire-off system • Main inverter (electric traction) Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.