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STGYA50H120DF2 - IGBT

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STMicroelectronics

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STGYA50H120DF2 IGBT by STMicroelectronics - Datasheet Preview — Datasheet preview – STGYA50H120DF2

Datasheet Details

Part number	STGYA50H120DF2
Manufacturer	STMicroelectronics
File Size	2.13 MB
Description	IGBT
Datasheet	STGYA50H120DF2 Datasheet
Additional preview pages of the STGYA50H120DF2 datasheet.

Product details

Description

This device is IGBT developed using an advanced proprietary trench gate fieldstop structure.

Features

Maximum junction temperature: TJ = 175 °C.
5 μs of short-circuit withstand time.
Low VCE(sat) = 2.1 V (typ. ) @ IC = 50 A.
Tight parameter distribution.
Positive VCE(sat) temperature coefficient.
Low thermal resistance.
Very fast recovery antiparallel diode.

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Published: Mar 7, 2023 |