STH175N4F6-2AG Datasheet - STMicroelectronics

N-channel Power MOSFET

STH175N4F6-2AG Features

* TAB 2 3 1 H2PAK-2 TAB 7 1 H2PAK-6 Figure 1. Internal schematic diagram D(TAB) D(TAB) Order codes STH175N4F6-2AG STH175N4F6-6AG VDS 40 V RDS(on) max ID 2.4 mΩ 120 A

* Designed for automotive applications and AEC-Q101 qualified

* Very low on-resistance

* Very low gate

STH175N4F6-2AG General Description

These devices are N-channel Power MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages. Order codes STH175N4F6-2AG STH175N4F6-6AG Table 1. Device summary Marking Package 175N4F6 H2PAK-2 H2PAK-.

STH175N4F6-2AG Datasheet (564.96 KB)

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STH175N4F6-2AG

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N-channel power mosfet.
STH175N4F6-2AG, STH175N4F6-6AG Automotive-grade N-channel 40 V, 1.9 mΩ typ.,120 A STripFET™ F6 Power MOSFETs in H²PAK-2 and H²PAK-6 packages Datasheet.

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STH175N4F6-2AG Features

STH175N4F6-2AG General Description

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STH175N4F6-2AG Distributor