STH175N4F6-2AG Description
These devices are N-channel Power MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages. Order codes STH175N4F6-2AG STH175N4F6-6AG Table.
STH175N4F6-2AG Key Features
- Designed for automotive