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STH260N6F6-2 - N-CHANNEL Power MOSFET

General Description

This STripFET™ DeepGATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performances.

Table 1.

Key Features

  • Type STH260N6F6-2 STP260N6F6.
  • VDSS 60 V 60 V RDS(on) max < 0.002 Ω < 0.003 Ω ID 180 A 120 A 3 1 3 N-channel enhancement mode 100% avalanched rated Low gate charge Very low on-resistance 2 2 H2PAK-2 TO-220 1.

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www.DataSheet4U.com STH260N6F6-2 STP260N6F6 N-channel 60 V, 0.0016 Ω, 180 A TO-220, H2PAK-2 STripFET™ DeepGATE™ VI Power MOSFET Preliminary data Features Type STH260N6F6-2 STP260N6F6 ■ ■ ■ ■ VDSS 60 V 60 V RDS(on) max < 0.002 Ω < 0.003 Ω ID 180 A 120 A 3 1 3 N-channel enhancement mode 100% avalanched rated Low gate charge Very low on-resistance 2 2 H2PAK-2 TO-220 1 Application ■ Switching applications Figure 1. Internal schematic diagram Description This STripFET™ DeepGATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performances. $ ' 3 !-V Table 1.