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STI20N60M2-EP Datasheet - STMicroelectronics

N-CHANNEL POWER MOSFET

STI20N60M2-EP Features

* Order code VDS RDS(on) max. STI20N60M2-EP 600 V 0.278 Ω

* Extremely low gate charge

* Excellent output capacitance (COSS) profile

* Very low turn-off switching losses

* 100% avalanche tested

* Zener-protected ID 13 A Applications

* Switching a

STI20N60M2-EP General Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it su.

STI20N60M2-EP Datasheet (240.14 KB)

Preview of STI20N60M2-EP PDF

Datasheet Details

Part number:

STI20N60M2-EP

Manufacturer:

STMicroelectronics ↗

File Size:

240.14 KB

Description:

N-channel power mosfet.
STI20N60M2-EP N-channel 600 V, 0.230 Ω typ., 13 A MDmesh™ M2 EP Power MOSFET in an I²PAK package TAB 123 I²PAK D(2, TAB) G(1) S(3) AM01475V1 Pro.

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STI20N60M2-EP N-CHANNEL POWER MOSFET STMicroelectronics

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