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STI20N60M2-EP Datasheet N-CHANNEL POWER MOSFET

Manufacturer: STMicroelectronics

General Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency conv

Overview

STI20N60M2-EP N-channel 600 V, 0.230 Ω typ., 13 A MDmesh™ M2 EP Power MOSFET in an I²PAK package TAB 123 I²PAK D(2, TAB) G(1) S(3) AM01475V1 Product status link STI20N60M2-EP Product summary Order code STI20N60M2-EP.

Key Features

  • Order code VDS RDS(on) max. STI20N60M2-EP 600 V 0.278 Ω.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • Very low turn-off switching losses.
  • 100% avalanche tested.
  • Zener-protected ID 13 A.