STI47N60DM6AG Datasheet | STMicroelectronics

Features Order code STI47N60DM6AG VDS 600 V RDS(on) max. 80 mΩ ID 36 A - AEC-Q101 qualified - Fast-recovery body diode - Lower RDS(on) per area vs previous generation - Low gate charge, input capacitance and resistance - 100% avalanche tested - Extremely high dv/dt ruggedness - Zener-protected Applications - Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series. pared with the previous MDmesh fast generation, DM6 bines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STI47N60DM6AG Product summary Order code Marking 47N60DM6 Package I²PAK Packing Tube DS12101 - Rev 3 - March 2019 For further information contact your local STMicroelectronics sales office. .st. Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100...