Datasheet Summary
Automotive-grade N-channel 40 V, 3.3 mΩ typ., 108 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package
- production data
Figure 1: Internal schematic diagram
Features
Order code STL110N4F7AG
VDS 40 V
RDS(on) max 4.0 mΩ
ID 108 A
- AEC-Q101 qualified
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
Applications
- Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more...