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STL11N3LLH6 Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

General Description

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

S(1, 2, 3) Order code STL11N3LLH6 1234 AM15810v1 Table 1: Device summary Marking Package 11N3L PowerFLATTM 3.3x3.3 Packing Tape and reel February 2017 DocID17755 Rev 3 This is information on a product in full production.

Overview

STL11N3LLH6 N-channel 30 V, 6 mΩ typ., 11 A STripFET™ H6 Power MOSFET in a PowerFLAT™ 3.3x3.

Key Features

  • Order code STL11N3LLH6 VDS 30 V RDS(on) max 7.5 mΩ ID 11 A.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss.