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STL11N60M2-EP - N-channel Power MOSFET

Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology.

Features

  • Order code VDS RDS(on) max. STL11N60M2-EP 600 V 0.654 Ω.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • Very low turn-off switching losses.
  • 100% avalanche tested.
  • Zener-protected.

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Datasheet preview – STL11N60M2-EP

Datasheet Details

Part number STL11N60M2-EP
Manufacturer STMicroelectronics
File Size 595.49 KB
Description N-channel Power MOSFET
Datasheet download datasheet STL11N60M2-EP Datasheet
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Full PDF Text Transcription

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STL11N60M2-EP Datasheet N-channel 600 V, 0.600 Ω typ., 5.5 A MDmesh™ M2 EP Power MOSFET in a PowerFLAT™ 5x6 HV package 1 2 3 4 PowerFLAT™ 5x6 HV D(5, 6, 7, 8) 8 76 5 Features Order code VDS RDS(on) max. STL11N60M2-EP 600 V 0.654 Ω • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100% avalanche tested • Zener-protected Applications G(4) • Switching applications ID 5.5 A S(1, 2, 3) 12 34 Top View AM15540v1 Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology.
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