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STL11N60M2-EP Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

General Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters.

Product status STL11M60M2-EP Product summary Order code STL11N60M2-EP Marking 11N60M2E Package PowerFLAT™

Overview

STL11N60M2-EP Datasheet N-channel 600 V, 0.600 Ω typ., 5.5 A MDmesh™ M2 EP Power MOSFET in a PowerFLAT™ 5x6 HV package 1 2 3 4 PowerFLAT™ 5x6 HV D(5, 6, 7, 8) 8 76.

Key Features

  • Order code VDS RDS(on) max. STL11N60M2-EP 600 V 0.654 Ω.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • Very low turn-off switching losses.
  • 100% avalanche tested.
  • Zener-protected.