Datasheet Summary
N-channel 60 V, 10 mΩ typ., 11 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 3.3x3.3 package
- production data
1 2 3 4
PowerFLAT™ 3.3x3.3
Figure 1: Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
Features
Order code STL11N6F7
VDS 60 V
RDS(on) max. 12 mΩ
ID 11 A
Features
- Among the lowest RDS(on) on the market
- Excellent figure of merit (FoM)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
Applications
- Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate...