STL115N10F7AG Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL115N10F7AG Table 1: Device summary Marking Package 115N10F7 PowerFLAT™ 5x6 Packaging Tape and reel December 2016 DocID029841 Rev 2 This is information on a...
STL115N10F7AG Key Features
- AEC-Q101 qualified
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness