STL110N4F7AG Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL110N4F7AG Table 1: Device summary Marking Package 110N4F7 PowerFLATTM 5x6 Packaging Tape and reel October 2017 DocID030194 Rev 3 This is information on a product...
STL110N4F7AG Key Features
- AEC-Q101 qualified
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness