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STL11N6F7 Datasheet

N-channel Power MOSFET

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STL11N6F7
N-channel 60 V, 10 mΩ typ., 11 A STripFET™ F7
Power MOSFET in a PowerFLAT™ 3.3x3.3 package
Datasheet - production data
1
2
3
4
PowerFLAT™ 3.3x3.3
Figure 1: Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
Features
Order code
STL11N6F7
VDS
60 V
RDS(on) max.
12 mΩ
ID
11 A
Features
Among the lowest RDS(on) on the market
Excellent figure of merit (FoM)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
S(1, 2, 3)
1234
AM15810v1
Order code
STL11N6F7
Marking
11N6F
Table 1: Device summary
Package
PowerFLAT™ 3.3x3.3
Packing
Tape and reel
November 2015
DocID028134 Rev 2
This is information on a product in full production.
1/13
www.st.com


STMicroelectronics Electronic Components Datasheet

STL11N6F7 Datasheet

N-channel Power MOSFET

No Preview Available !

Contents
Contents
STL11N6F7
1 Electrical ratings............................................................................... 3
2 Electrical characteristics ................................................................. 4
2.1 Electrical characteristics (curve)........................................................ 5
3 Test circuits ...................................................................................... 7
4 Package mechanical data ................................................................ 8
4.1 PowerFLAT 3.3x3.3 package information ......................................... 9
5 Revision history.............................................................................. 12
2/13 DocID028134 Rev 2


Part Number STL11N6F7
Description N-channel Power MOSFET
Maker STMicroelectronics
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