STL19N3LLH6AG Datasheet - STMicroelectronics

N-channel Power MOSFET

STL19N3LLH6AG Features

* Order code VDS STL19N3LLH6AG 30 V

* AEC-Q101 qualified

* Very low on-resistance

* Very low gate charge

* High avalanche ruggedness

* Low gate drive power loss

* Logic level

* Wettable flank package RDS(on) max. 33 mΩ ID 10 A PTOT 50 W

STL19N3LLH6AG General Description

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STL19N3LLH6AG Product summary Order code STL19N3LLH6AG Marking 19N3LLH6 Package Pow.

STL19N3LLH6AG Datasheet (637.89 KB)

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STL19N3LLH6AG

Manufacturer:

STMicroelectronics ↗

File Size:

637.89 KB

Description:

N-channel power mosfet.
STL19N3LLH6AG Datasheet Automotive-grade N-channel 30 V, 23 mΩ typ., 10 A, STripFET™ H6 Power MOSFET in a PowerFLAT 5x6 package 4 3 2 1 PowerFLAT™ 5.

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STL19N3LLH6AG Features

STL19N3LLH6AG General Description

Datasheet Details

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