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STL19N3LLH6AG Datasheet

N-channel Power MOSFET

Manufacturer: STMicroelectronics

STL19N3LLH6AG Overview

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

STL19N3LLH6AG Key Features

  • AEC-Q101 qualified
  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss
  • Logic level
  • Wettable flank package

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