STL200N45LF7 Overview
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL200N45LF7 Table 1: Device summary Marking Package 200N45F7 PowerFLAT™ 5x6 Packing Tape and reel June 2016 DocID027980 Rev 4 This is information on a product in...
STL200N45LF7 Key Features
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness