Datasheet Summary
Automotive-grade N-channel 60 V, 21 mΩ typ., 32 A STripFET™ F6 Power MOSFET in a PowerFLAT™ 5x6 package
- production data
Figure 1: Internal schematic diagram
Features
Order code
VDS RDS(on) max. ID PTOT
STL8N6LF6AG 60 V
27 mΩ
32 A 55 W
- Designed for automotive applications and AEC-Q101 qualified
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
- Wettable flank package
Applications
- Switching applications
Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all...