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STN1HNK60 Datasheet N-channel MOSFET

Manufacturer: STMicroelectronics

Overview: STN1HNK60, STQ1HNK60R-AP Datasheet N-channel 600 V, 7.3 Ω typ., 0.

General Description

G(1) These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™.

In addition to a significant S(3) reduction in on-resistance, these devices are designed to ensure a high level of dv/dt Int_schem_nTnZ_SOT_223 capability for the most demanding applications.

Product status STN1HNK60 STQ1HNK60R-AP DS12594 - Rev 1 - August 2018 For further information contact your local STMicroelectronics sales office.

Key Features

  • Order code VDS STN1HNK60 STQ1HNK60R-AP 600 V.
  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Gate charge minimized.

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