STN1NF20 Description
This Power MOSFET has been developed using STMicroelectronics’ unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for tele and puter applications, and applications with low gate charge driving requirements. 4 3 2 1 SOT-223 Figure.
STN1NF20 Key Features
- 100% avalanche tested
- Low gate charge
- Exceptional dv/dt capability