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STO68N65DM6 Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STO68N65DM6 Datasheet N-channel 650 V, 53 mΩ typ., 55 A MDmesh DM6 Power MOSFET in a TO‑LL package TO-LL type A2 Drain (TAB) Gate(1) Driver source (2) Power source (3, 4, 5, 6,.

General Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.

Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Product status link STO68N65DM6 Product summary Order code STO68N65DM6 Marking 68N65DM6 Package TO-LL type A2 Packing Tape and reel DS13723 - Rev 1 - May 2021 For further information contact your local STMicroelectronics sales office.

Key Features

  • Order code VDS RDS(on) max. ID STO68N65DM6 650 V 65 mΩ 55 A.
  • Fast-recovery body diode.
  • Lower RDS(on) per area vs previous generation.
  • Low gate charge, input capacitance and resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.
  • Excellent switching performance thanks to the extra driving source pin.

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