STO68N65DM6 Datasheet - STMicroelectronics

N-channel Power MOSFET

STO68N65DM6 Features

* Order code VDS RDS(on) max. ID STO68N65DM6 650 V 65 mΩ 55 A

* Fast-recovery body diode

* Lower RDS(on) per area vs previous generation

* Low gate charge, input capacitance and resistance

* 100% avalanche tested

* Extremely high dv/dt ruggedness

STO68N65DM6 General Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching beh.

STO68N65DM6 Datasheet (1.52 MB)

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Datasheet Details

Part number:

STO68N65DM6

Manufacturer:

STMicroelectronics ↗

File Size:

1.52 MB

Description:

N-channel power mosfet.
STO68N65DM6 Datasheet N-channel 650 V, 53 mΩ typ., 55 A MDmesh DM6 Power MOSFET in a TO‑LL package TO-LL type A2 Drain (TAB) Gate(1) Driver source .

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STO68N65DM6 Features

STO68N65DM6 General Description

Datasheet Details

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