STP110N8F7 Overview
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STP110N8F7 Table 1: Device summary Marking Package 110N8F7 TO-220 Packaging Tube November 2015 DocID027154 Rev 2 This is information on a product in full production.
Key Features
- Among the lowest RDS(on) on the market
- Excellent figure of merit (FoM)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
