Datasheet Summary
N-channel 80 V, 6.4 mΩ typ., 80 A, STripFET™ F7 Power MOSFET in a TO-220 package
- production data
Figure 1: Internal schematic diagram
Features
Order code STP110N8F7
VDS 80 V
RDS(on)max 7.5 mΩ
ID 80 A
PTOT 170 W
- Among the lowest RDS(on) on the market
- Excellent figure of merit (FoM)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
Applications
- Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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