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STP110N8F7 Datasheet

N-channel Power MOSFET

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STP110N8F7
N-channel 80 V, 6.4 mΩ typ., 80 A, STripFET™ F7
Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
STP110N8F7
VDS
80 V
RDS(on)max
7.5 mΩ
ID
80 A
PTOT
170 W
Among the lowest RDS(on) on the market
Excellent figure of merit (FoM)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Order code
STP110N8F7
Table 1: Device summary
Marking
Package
110N8F7
TO-220
Packaging
Tube
November 2015
DocID027154 Rev 2
This is information on a product in full production.
1/13
www.st.com


STMicroelectronics Electronic Components Datasheet

STP110N8F7 Datasheet

N-channel Power MOSFET

No Preview Available !

Contents
Contents
STP110N8F7
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves)...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package mechanical data ............................................................... 9
4.1 TO-220 package mechanical data .................................................. 10
5 Revision history ............................................................................ 12
2/13 DocID027154 Rev 2


Part Number STP110N8F7
Description N-channel Power MOSFET
Maker STMicroelectronics
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STP110N8F7 Datasheet PDF






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