STP110N8F7
Features
Order code STP110N8F7
VDS 80 V
RDS(on)max 7.5 mΩ
ID 80 A
PTOT 170 W
- Among the lowest RDS(on) on the market
- Excellent figure of merit (Fo M)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
Applications
- Switching applications
Description
This N-channel Power MOSFET utilizes STrip FET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Order code STP110N8F7
Table 1: Device summary
Marking
Package
110N8F7
TO-220
Packaging Tube
November 2015
Doc ID027154 Rev 2
This is information on a product in full production.
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Contents
Contents
1 Electrical ratings 3
2 Electrical characteristics 4
2.1 Electrical characteristics (curves)...
