STP11N60DM2 Datasheet - STMicroelectronics

N-CHANNEL POWER MOSFET

STP11N60DM2 Features

* Order code STP11N60DM2 VDS @ TJmax. 650 V RDS(on) max. 0.420 Ω ID 10 A PTOT 110 W

* Fast-recovery body diode

* Extremely low gate charge and input capacitance

* Low on-resistance

* 100% avalanche tested

* Extremely high dv/dt ruggedness

* Zener-protected Applications

STP11N60DM2 General Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shi.

STP11N60DM2 Datasheet (574.85 KB)

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Datasheet Details

Part number:

STP11N60DM2

Manufacturer:

STMicroelectronics ↗

File Size:

574.85 KB

Description:

N-channel power mosfet.
STP11N60DM2 N-channel 600 V, 0.370 Ω typ., 10 A MDmesh™ DM2 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schemati.

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STP11N60DM2 Features

STP11N60DM2 General Description

Datasheet Details

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