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STP11NM60AFP - N-CHANNEL Power MOSFET

Download the STP11NM60AFP datasheet PDF. This datasheet also covers the STP11NM60A variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout.

The resulting product has an outstanding low on-resistance, impressively high dv/dt.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STP11NM60A_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by STMicroelectronics

Part Number Description
STP11NM60A N-CHANNEL Power MOSFET
STP11NM60 N-CHANNEL Power MOSFET
STP11NM60FD N-CHANNEL Power MOSFET
STP11NM60FDFP N-CHANNEL Power MOSFET
STP11NM60FP N-CHANNEL Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com N-CHANNEL 600V - 0.4Ω - 11A TO-220/TO-220FP/I2PAK MDmesh™Power MOSFET TYPE STP11NM60A STP11NM60AFP STB11NM60A-1 n n n n STP11NM60A STP11NM60AFP - STB11NM60A-1 VDSS 600 V 600 V 600 V RDS(on) <0.45Ω <0.45Ω <0.45Ω ID 11 A 11 A 11 A 3 1 2 TYPICAL RDS(on) = 0.4Ω HIGH dv/dt LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE 3 12 TO-220 3 1 2 I2PAK DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.