STP11NM60ND Overview
S(3) This FDmesh II Power MOSFET with fast-recovery body diode is produced using AM01475v1_noZen MDmesh II technology. Utilizing a new strip-layout vertical structure, this device.
STP11NM60ND Key Features
- Fast-recovery body diode
- Low gate charge and input capacitance
- Low on-resistance RDS(on)
- 100% avalanche tested
- High dv/dt ruggedness
