STP11NM60ND
Description
S(3) This FDmesh II Power MOSFET with fast-recovery body diode is produced using AM01475v1_noZen MDmesh II technology.
Key Features
- TAB TO-220 1 23 D(2, TAB) Order code VDS at TJ max. RDS(on) max. ID STP11NM60ND 650 V 450 mΩ 10 A
- Fast-recovery body diode
- Low gate charge and input capacitance
- Low on-resistance RDS(on)
- 100% avalanche tested
- High dv/dt ruggedness
