STP11NM60ND mosfet equivalent, n-channel power mosfet.
TAB
TO-220
1 23
D(2, TAB)
Order code
VDS at TJ max.
RDS(on) max.
ID
STP11NM60ND
650 V
450 mΩ
10 A
* Fast-recovery body diode
* Low gate charge and i.
* Switching applications
G(1)
Description
S(3)
This FDmesh II Power MOSFET with fast-recovery body diode is produ.
S(3)
This FDmesh II Power MOSFET with fast-recovery body diode is produced using
AM01475v1_noZen
MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It .
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