STP11NM60ND Overview
Key Specifications
Package: TO-220
Mount Type: Through Hole
Pins: 3
Height: 15.75 mm
Description
S(3) This FDmesh II Power MOSFET with fast-recovery body diode is produced using AM01475v1_noZen MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance.
Key Features
- Fast-recovery body diode
- Low gate charge and input capacitance
- Low on-resistance RDS(on)
- 100% avalanche tested
- High dv/dt ruggedness
