STP260N6F6 Description
These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. TAB TAB 123 I²PAK 3 2 1 TO-220 Figure.
STP260N6F6 Key Features
- Low gate charge
- Very low on-resistance
- High avalanche ruggedness
- Switching