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STP260N6F6 - N-channel Power MOSFET

General Description

These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.

Figure 1.

Key Features

  • Order codes STI260N6F6 STP260N6F6 VDSS 60 V RDS(on) max ID < 0.003 Ω 120 A.
  • Low gate charge.
  • Very low on-resistance.
  • High avalanche ruggedness.

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STI260N6F6 STP260N6F6 N-channel 60 V, 0.0024 Ω, 120 A STripFET™ VI DeepGATE™ Power MOSFET in TO-220 and I²PAK packages Features Order codes STI260N6F6 STP260N6F6 VDSS 60 V RDS(on) max ID < 0.003 Ω 120 A ■ Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness Application ■ Switching applications Description These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. TAB TAB 123 I²PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram $ 4!" ' 3 !-V Table 1.