Datasheet Summary
Automotive-grade N-channel 60 V, 2.3 mΩ typ., 180 A STripFET™ F6 Power MOSFET in a TO-220 package
- production data
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code STP265N6F6AG
VDS 60 V
RDS(on) max 2.85 mΩ
ID 180 A
- AEC-Q101 qualified
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
Applications
- Switching applications
Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
S(3)
Order code STP265N6F6AG
AM01475v1_Tab
Table 1: Device...