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STP28N60DM2 Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

General Description

These high voltage N-channel Power MOSFETs are part of the MDmesh™ DM2 fast recovery diode series.

They offer very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering them suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Table 1: Device summary Marking Package Packing D²PAK Tape and reel 28N60DM2 TO-220 Tube TO-247 Tube December 2015 DocID027040 Rev 4 This is information on a product in full production.

Overview

STB28N60DM2, STP28N60DM2, STW28N60DM2 N-channel 600 V, 0.13 Ω typ.

Key Features

  • Order code STB28N60DM2 STP28N60DM2 STW28N60DM2 VDS @ TJmax. 600 V RDS(on) max. ID PTOT 0.16 Ω 21 A 170 W Figure 1: Internal schematic diagram.
  • Fast-recovery body diode.
  • Extremely low gate charge and input capacitance.
  • Low on-resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.